Article in Advanced Materials on high-performance FET based on InSe
Posted October 28, 2014 
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This paper appearing in Advanced Materials
Back Gated Multilayer InSe Transistors with Enhanced Carrier Mobilities via the Suppression of Carrier Scattering from a Dielectric Interface
reports on the effects of substrate to limit the versatitily of InSe nanosheets as FE transistors.
More info in:
http://onlinelibrary.wiley.com/doi/10.1002/adma.201402427/full
